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| Guilin Strong Micro-Electronics Co.,Ltd. GMA92 GMA93 MAXIMUM MAXIMUM RATINGS Symbol VCEO VCBO VEBO Ic GMA92 -300 -300 -6.0 -500 GMA93 -200 -200 -6.0 -500 Unit Vdc Vdc Vdc mAdc Characteristic Collector-Emitter Voltage - Collector-Base Voltage - Emitter-Base Voltage Collector Current-Continuous - THERMAL THERMAL CHARACTERISTICS Symbol PD Max 225 1.8 PD 300 2.4 RJA TJ,Tstg 417 Unit mW mW/ mW mW/ /W Characteristic Total Device Dissipation FR-5 Board(1) TA=25 25 Derate above25 25 Total Device Dissipation Alumina Substrate ,(2) TA=25 25 Derate above25 25 Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE DEVICE MARKING 150, -55to+150 GMA92=2D;GMA93=2E Guilin Strong Micro-Electronics Co.,Ltd. GMA92 GMA93 CHARACTERISTICS ) (TA=25 =25 unless otherwise noted 25) Characteristic Symbol Min ELECTRICAL ELECTRICAL Collector-Emitter Breakdown Voltage(3) -(Ic=-1.0mAdc,IB=0) Collector-Base Breakdown Voltage -(Ic=-100Adc,IE=0) Emitter-Base Breakdown Voltage -(IE=-10Adc,Ic=0) Emitter Cutoff Current (VEB=-3.0Vdc,Ic=0) Collector Cutoff Current (VCB=-200Vdc,IE=0) (VCB=-160Vdc,IE=0) DC Current Gain (Ic=-1.0mAdc,VCE=-10.0Vdc) (Ic=-10mAdc,VCE=-10.0Vdc) (Ic=-30mAdc,VCE=-10.0Vdc) Collector-Emitter Saturation Voltage - (Ic=-20mAdc, IB=-2.0mAdc) Base-Emitter Saturation Voltage - (Ic=-20mAdc, IB=-2.0mAdc) Current-Gain-Bandwidth Product - (Ic=-10mAdc,VCE=-20Vdc,f=100MHz) Collector-Base Capacitance (VCB=-20.0Vdc, IE=0, f=1.0MHz) FR-5=1.0x0.75x0.062in. Alumina=0.4x0.3x0.024in.99.5%alumina. Pulse Width<300us;Duty Cycle<2.0%. V(BR)CEO GMA92 GMA93 V(BR)CBO GMA92 GMA93 V(BR)EBO IEBO ICBO GMA92 GMA93 HFE 25 40 25 25 -- -- -300 -200 -300 -200 -5.0 __ -- __ Max -- -- -- __ -- -100 -250 -250 -- 300 -- __ -0.5 -0.5 Unit Vdc Vdc Vdc nAdc nAdc -- GMA92 GMA93 VCE(sat) GMA92 GMA93 Vdc VBE(sat) -- -0.9 Vdc fT Ccb GMA92 GMA93 50 -- __ __ 6.0 8.0 MHz pF Guilin Strong Micro-Electronics Co.,Ltd. GMA92 GMA93 DIMENSION DIMENSION |
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